Abasov FP
Developed a silicon-based photodetector with high sensitivity integrated in the short range. The influence of gamma radiation on the mechanism of current flow in the structure type Schottky barrier, and the p-n junctions. It is shown that the double-barrier structure can improve the photoelectric parameters of conventional detectors.
Teile diesen Artikel
English 
Spanish 
Chinese 
Russian 
French 
Japanese 
Portuguese 
Hindi 